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dc.contributor.authorMartens, Koen
dc.contributor.authorRooyackers, Rita
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorVincent, Benjamin
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMeuris, Marc
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSimoen, Eddy
dc.contributor.authorJurczak, Gosia
dc.contributor.authorWouters, Dirk
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-19T16:07:45Z
dc.date.available2021-10-19T16:07:45Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19396
dc.sourceIIOimport
dc.titleContact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
dc.typeJournal article
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage13504
dc.source.journalApplied Physics Letters
dc.source.issue1
dc.source.volume98
imec.availabilityPublished - open access


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