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H2S molecular beam passivation of Ge(001)

dc.contributor.authorMerckling, Clement
dc.contributor.authorChang, Yao-Chung
dc.contributor.authorLu, Chung-Yu
dc.contributor.authorPenaud, Julien
dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorBellenger, Florence
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHong, Minghwei
dc.contributor.authorKwo, Raynien
dc.contributor.authorMeuris, Marc
dc.contributor.authorDekoster, Johan
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:16:18Z
dc.date.available2021-10-19T16:16:18Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19418
dc.sourceIIOimport
dc.titleH2S molecular beam passivation of Ge(001)
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage399
dc.source.endpage402
dc.source.journalMicroelectronic Engineering
dc.source.issue4
dc.source.volume88
imec.availabilityPublished - open access


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