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Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrate

dc.contributor.authorMerckling, Clement
dc.contributor.authorSaint-Girons, Guillaume
dc.contributor.authorBotella, Claude
dc.contributor.authorHollinger, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:16:42Z
dc.date.available2021-10-19T16:16:42Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19419
dc.sourceIIOimport
dc.titleMolecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrate
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage92901
dc.source.journalApplied Physics Letters
dc.source.issue9
dc.source.volume98
imec.availabilityPublished - imec


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