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GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

dc.contributor.authorMerckling, Clement
dc.contributor.authorSun, Xiao
dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorHeyns, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorDekoster, Johan
dc.date.accessioned2021-10-19T16:17:33Z
dc.date.available2021-10-19T16:17:33Z
dc.date.issued2011
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19421
dc.sourceIIOimport
dc.titleGaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDekoster, Johan
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpage73719
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume109
imec.availabilityPublished - imec


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