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dc.contributor.authorMerckling, Clement
dc.contributor.authorSun, Xiao
dc.contributor.authorShimura, Y.
dc.contributor.authorFranquet, Alexis
dc.contributor.authorVincent, Benjamin
dc.contributor.authorTakeuchi, S.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorNakastuka, O.
dc.contributor.authorZaima, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T16:17:59Z
dc.date.available2021-10-19T16:17:59Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19422
dc.sourceIIOimport
dc.titleMolecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorSun, Xiao
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage192110
dc.source.journalApplied Physics Letters
dc.source.issue19
dc.source.volume98
imec.availabilityPublished - imec


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