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Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

dc.contributor.authorMolle, Alessandro
dc.contributor.authorLamagna, Luca
dc.contributor.authorGrazianetti, C.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorCaymax, Matty
dc.contributor.authorSpiga, Sabina
dc.contributor.authorFanciulli, Marco
dc.date.accessioned2021-10-19T16:28:50Z
dc.date.available2021-10-19T16:28:50Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19448
dc.sourceIIOimport
dc.titleReconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
dc.typeJournal article
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewyes
dc.source.beginpage193505
dc.source.journalApplied Physics Letters
dc.source.issue19
dc.source.volume99
imec.availabilityPublished - imec


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