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Cluster effect on projected range of 30 keV C60+ in silicon

dc.contributor.authorMorita, Y.
dc.contributor.authorNakajima, K.
dc.contributor.authorSuzuki, M.
dc.contributor.authorSaitoh, Y.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKimura, K.
dc.date.accessioned2021-10-19T16:31:16Z
dc.date.available2021-10-19T16:31:16Z
dc.date.issued2011
dc.identifier.issn0168-583X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19454
dc.sourceIIOimport
dc.titleCluster effect on projected range of 30 keV C60+ in silicon
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2080
dc.source.endpage2083
dc.source.journalNuclear Instruments and Methods in Physics Research B
dc.source.issue19
dc.source.volume269
imec.availabilityPublished - open access


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