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Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

dc.contributor.authorMuller, Christophe
dc.contributor.authorDeleruyelle, Damien
dc.contributor.authorMuller, Robert
dc.contributor.authorThomas, Maryline
dc.contributor.authorDemolliens, Antoine
dc.contributor.authorTurquat, Christian
dc.contributor.authorSpiga, Sabina
dc.date.accessioned2021-10-19T16:32:32Z
dc.date.available2021-10-19T16:32:32Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19457
dc.sourceIIOimport
dc.titleResistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage168
dc.source.endpage174
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume56
dc.identifier.urlhttp://dx.doi.org/10.1016/j.sse.2010.10.006
imec.availabilityPublished - imec


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