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High mobility short-channel p-type organic transistors with reduced gold content and completely gold-free source/drain bottom contacts

dc.contributor.authorMuller, Robert
dc.contributor.authorSmout, Steve
dc.contributor.authorRolin, Cedric
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-19T16:32:56Z
dc.date.available2021-10-19T16:32:56Z
dc.date.issued2011
dc.identifier.issn1566-1199
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19458
dc.sourceIIOimport
dc.titleHigh mobility short-channel p-type organic transistors with reduced gold content and completely gold-free source/drain bottom contacts
dc.typeJournal article
dc.contributor.imecauthorSmout, Steve
dc.contributor.imecauthorRolin, Cedric
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecSmout, Steve::0000-0001-5464-8951
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage1227
dc.source.endpage1235
dc.source.journalOrganic Electronics
dc.source.issue7
dc.source.volume12
dc.identifier.urlhttp://dx.doi.org/10.1016/j.orgel.2011.03.033
imec.availabilityPublished - imec


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