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Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories

dc.contributor.authorNardi, F.
dc.contributor.authorIelmini, D.
dc.contributor.authorCagli, C.
dc.contributor.authorSpiga, S.
dc.contributor.authorFanciulli, M.
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-19T16:38:18Z
dc.date.available2021-10-19T16:38:18Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19472
dc.sourceIIOimport
dc.titleControl of filament size and reduction of reset current below 10μA in NiO resistance switching memories
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage42
dc.source.endpage47
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume58
imec.availabilityPublished - imec


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