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Time dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETs

dc.contributor.authorO'Connor, Robert
dc.contributor.authorHughes, Greg
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-19T16:48:46Z
dc.date.available2021-10-19T16:48:46Z
dc.date.issued2011
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19498
dc.sourceIIOimport
dc.titleTime dependent dielectric breakdown and stress induced leakage current characteristics of 0.7nm EOT HfO2 pFETs
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage290
dc.source.endpage294
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue2
dc.source.volume11
imec.availabilityPublished - open access


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