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Physical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement

dc.contributor.authorPey, Kin Leong
dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorWu, Xing
dc.contributor.authorLiu, Wenhu
dc.contributor.authorLi, Xiang
dc.contributor.authorBosman, Michel
dc.contributor.authorShubhakar, Kalya
dc.contributor.authorLwin, Zin Zar
dc.contributor.authorChen, Yining
dc.contributor.authorQin, Hailang
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-19T17:17:12Z
dc.date.available2021-10-19T17:17:12Z
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19567
dc.sourceIIOimport
dc.titlePhysical analysis of beakdown in High-k /metal gate stacks using TEM/EELS and STM for relibaility enhancement
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1365
dc.source.endpage1372
dc.source.journalMicroelectronic Engineering
dc.source.issue7
dc.source.volume88
imec.availabilityPublished - open access
imec.internalnotesINFOS 2011 paper


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