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Epitaxial growth of Gd silicides prepared by channeled ion implantation

dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorPattyn, Hugo
dc.contributor.authorLangouche, G.
dc.date.accessioned2021-09-30T08:31:20Z
dc.date.available2021-09-30T08:31:20Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1957
dc.sourceIIOimport
dc.titleEpitaxial growth of Gd silicides prepared by channeled ion implantation
dc.typeJournal article
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3103
dc.source.endpage3107
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume81
imec.availabilityPublished - open access


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