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Very low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime

dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorPey, Kin Leong
dc.contributor.authorLi, Xiang
dc.contributor.authorLiu, Wenhu
dc.contributor.authorWu, Xing
dc.contributor.authorBosman, Michel
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-19T17:50:20Z
dc.date.available2021-10-19T17:50:20Z
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19647
dc.sourceIIOimport
dc.titleVery low reset current for an RRAM device achieved in the oxygen-vacancy-controlled regime
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage716
dc.source.endpage718
dc.source.journalIEEE Electron Device Letters
dc.source.issue6
dc.source.volume32
imec.availabilityPublished - open access


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