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Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition

dc.contributor.authorRampelberg, Geert
dc.contributor.authorSchaekers, Marc
dc.contributor.authorMartens, Koen
dc.contributor.authorXie, Qi
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDe Schutter, Bob
dc.contributor.authorBlasco, Nicolas
dc.contributor.authorKittl, Jorge
dc.contributor.authorDetavernier, Christophe
dc.date.accessioned2021-10-19T17:54:35Z
dc.date.available2021-10-19T17:54:35Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19656
dc.sourceIIOimport
dc.titleSemiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
dc.typeJournal article
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorXie, Qi
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.source.peerreviewyes
dc.source.beginpage162902
dc.source.journalApplied Physics Letters
dc.source.issue16
dc.source.volume98
imec.availabilityPublished - imec


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