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Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorEneman, Geert
dc.contributor.authorDobbie, A.
dc.contributor.authorMyronov, M.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T18:55:03Z
dc.date.available2021-10-19T18:55:03Z
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19792
dc.sourceIIOimport
dc.titleDefect-related excess low-frequency noise in Ge-on-Si pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage87
dc.source.endpage89
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume32
imec.availabilityPublished - open access


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