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Low-frequency noise characterizations of strained germanium pMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorEneman, Geert
dc.contributor.authorDobbie, A.
dc.contributor.authorMyronov, M.
dc.contributor.authorWhall, T.
dc.contributor.authorLeadly, D.
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T18:55:34Z
dc.date.available2021-10-19T18:55:34Z
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19793
dc.sourceIIOimport
dc.titleLow-frequency noise characterizations of strained germanium pMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3132
dc.source.endpage3139
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue9
dc.source.volume58
imec.availabilityPublished - open access


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