dc.contributor.author | Srivastava, Puneet | |
dc.contributor.author | Das, Jo | |
dc.contributor.author | Visalli, Domenica | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | Malinowski, Pawel | |
dc.contributor.author | Marcon, Denis | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Geens, Karen | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Decoutere, Stefaan | |
dc.contributor.author | Mertens, Robert | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-19T19:09:33Z | |
dc.date.available | 2021-10-19T19:09:33Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 1610-1634 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19823 | |
dc.source | IIOimport | |
dc.title | Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal | |
dc.type | Journal article | |
dc.contributor.imecauthor | Malinowski, Pawel | |
dc.contributor.imecauthor | Marcon, Denis | |
dc.contributor.imecauthor | Geens, Karen | |
dc.contributor.imecauthor | Decoutere, Stefaan | |
dc.contributor.imecauthor | Mertens, Robert | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.contributor.orcidimec | Malinowski, Pawel::0000-0002-2934-470X | |
dc.contributor.orcidimec | Geens, Karen::0000-0003-1815-3972 | |
dc.contributor.orcidimec | Decoutere, Stefaan::0000-0001-6632-6239 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 2216 | |
dc.source.endpage | 2218 | |
dc.source.journal | Physica Status Solidi C | |
dc.source.issue | 7_8 | |
dc.source.volume | 8 | |
imec.availability | Published - imec | |
imec.internalnotes | Special issue Int. Workshop on Nitride Semiconductors (IWN) at E-MRS Fall Meeting 2010 | |