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Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMarcon, Denis
dc.contributor.authorCheng, Kai
dc.contributor.authorGeens, Karen
dc.contributor.authorLeys, Maarten
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T19:09:33Z
dc.date.available2021-10-19T19:09:33Z
dc.date.issued2011
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19823
dc.sourceIIOimport
dc.titleSignificant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal
dc.typeJournal article
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage2216
dc.source.endpage2218
dc.source.journalPhysica Status Solidi C
dc.source.issue7_8
dc.source.volume8
imec.availabilityPublished - imec
imec.internalnotesSpecial issue Int. Workshop on Nitride Semiconductors (IWN) at E-MRS Fall Meeting 2010


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