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dc.contributor.authorTallarida, Massimo
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorCaymax, Matty
dc.contributor.authorSchmeisser, Dieter
dc.date.accessioned2021-10-19T19:28:02Z
dc.date.available2021-10-19T19:28:02Z
dc.date.issued2011-07
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19862
dc.sourceIIOimport
dc.titleSurface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum
dc.typeJournal article
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage42906
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume99
dc.identifier.urlhttp://apl.aip.org/resource/1/applab/v99/i4/p042906_s1
imec.availabilityPublished - imec


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