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Interface trap density metrology of state-of-the-art undoped Si n-FinFETs

dc.contributor.authorTettamanzi, Giuseppe
dc.contributor.authorPaul, Abhijeet
dc.contributor.authorLee, Sunhee
dc.contributor.authorMehrotra, S.R.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKlimeck, G.
dc.contributor.authorRogge, Sven
dc.date.accessioned2021-10-19T19:35:07Z
dc.date.available2021-10-19T19:35:07Z
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19877
dc.sourceIIOimport
dc.titleInterface trap density metrology of state-of-the-art undoped Si n-FinFETs
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage440
dc.source.endpage443
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume32
imec.availabilityPublished - imec


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