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Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T19:44:04Z
dc.date.available2021-10-19T19:44:04Z
dc.date.issued2011
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19897
dc.sourceIIOimport
dc.titleTemperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage01AA04
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue1
dc.source.volume29
imec.availabilityPublished - open access


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