Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs
dc.contributor.author | Tsormpatzoglou, A. | |
dc.contributor.author | Thassis, D.H. | |
dc.contributor.author | Dimitriadis, C.A. | |
dc.contributor.author | Ghibaudo, G. | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Pananakakis, G. | |
dc.date.accessioned | 2021-10-19T19:56:10Z | |
dc.date.available | 2021-10-19T19:56:10Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/19921 | |
dc.source | IIOimport | |
dc.title | Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 31 | |
dc.source.endpage | 34 | |
dc.source.journal | Solid-State Electronics | |
dc.source.issue | 1 | |
dc.source.volume | 57 | |
imec.availability | Published - imec |
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