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Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

dc.contributor.authorUleckas, A.
dc.contributor.authorGaubas, E.
dc.contributor.authorRafi, J.M.
dc.contributor.authorChen, J.
dc.contributor.authorYang, D.
dc.contributor.authorOhyama, H.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, J.
dc.date.accessioned2021-10-19T19:58:50Z
dc.date.available2021-10-19T19:58:50Z
dc.date.issued2011
dc.identifier.issn1662-9779
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19926
dc.sourceIIOimport
dc.titleCarrier lifetime studies in diode structures on Si substrates with and without Ge doping
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage347
dc.source.endpage352
dc.source.journalSolid State Phenomena
dc.source.volume178-179
imec.availabilityPublished - open access
imec.internalnotesXIVth GADEST 2011


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