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Drain voltage dependent analytical model of tunnel field-effect transistors

dc.contributor.authorVerhulst, Anne
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorRooyackers, Rita
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-19T21:03:00Z
dc.date.available2021-10-19T21:03:00Z
dc.date.issued2011
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20061
dc.sourceIIOimport
dc.titleDrain voltage dependent analytical model of tunnel field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.source.peerreviewyes
dc.source.beginpage24510
dc.source.journalJournal of Applied Physics
dc.source.issue2
dc.source.volume110
dc.identifier.urlhttp://link.aip.org/link/?JAP/110/024510
imec.availabilityPublished - imec


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