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Spatially separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation

dc.contributor.authorVermang, Bart
dc.contributor.authorRothschild, Aude
dc.contributor.authorJohn, Joachim
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-19T21:10:21Z
dc.date.available2021-10-19T21:10:21Z
dc.date.issued2011
dc.identifier.issn1062-7995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20075
dc.sourceIIOimport
dc.titleSpatially separated atomic layer deposition of Al2O3, a new option for high-throughput Si solar cell passivation
dc.typeJournal article
dc.contributor.imecauthorVermang, Bart
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecVermang, Bart::0000-0003-2669-2087
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage733
dc.source.endpage739
dc.source.journalProgress in Photovoltaics Research and Applications
dc.source.issue6
dc.source.volume19
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pip.1092/pdf
imec.availabilityPublished - imec


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