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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorBender, Hugo
dc.contributor.authorMerckling, Clement
dc.contributor.authorDouhard, Bastien
dc.contributor.authorPetersen, D.H.
dc.contributor.authorHansen, O.
dc.contributor.authorHenrichsen, H.H.
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T21:19:46Z
dc.date.available2021-10-19T21:19:46Z
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20093
dc.sourceIIOimport
dc.titleUndoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage152103
dc.source.journalApplied Physics Letters
dc.source.issue15
dc.source.volume99
imec.availabilityPublished - open access


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