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Investigation of light-induced deep-level defect activation at the AlN/Si interface

dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorGeens, Karen
dc.contributor.authorDegroote, Stefan
dc.contributor.authorGermain, Marianne
dc.contributor.authorNguyen, Anh Phuc Duc
dc.contributor.authorStesmans, Andre
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-19T21:23:48Z
dc.date.available2021-10-19T21:23:48Z
dc.date.issued2011
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20100
dc.sourceIIOimport
dc.titleInvestigation of light-induced deep-level defect activation at the AlN/Si interface
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage94101
dc.source.journalApplied Physics Express
dc.source.issue9
dc.source.volume4
imec.availabilityPublished - open access


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