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dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Maarten
dc.contributor.authorLoo, Roger
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorBrammertz, Guy
dc.contributor.authorWaldron, Niamh
dc.contributor.authorWang, Wei-E
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-19T21:38:08Z
dc.date.available2021-10-19T21:38:08Z
dc.date.issued2011
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20128
dc.sourceIIOimport
dc.titleSelective area growth of InP and defect elimination on Si (001) substrates
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH645
dc.source.endpageH650
dc.source.journalJournal of the Electrochemical Society
dc.source.issue6
dc.source.volume158
imec.availabilityPublished - open access


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