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Statistical model for MOSFET bias temperature instability component due to charge trapping

dc.contributor.authorWirth, Gilson
dc.contributor.authorda Silva, Roberto
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-19T21:51:35Z
dc.date.available2021-10-19T21:51:35Z
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20154
dc.sourceIIOimport
dc.titleStatistical model for MOSFET bias temperature instability component due to charge trapping
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2743
dc.source.endpage2751
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume58
imec.availabilityPublished - open access


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