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On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's

dc.contributor.authorMenozzi, R.
dc.contributor.authorBorgarino, M.
dc.contributor.authorBaeyens, Yves
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorFantini, F.
dc.date.accessioned2021-09-30T09:18:03Z
dc.date.available2021-09-30T09:18:03Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2019
dc.sourceIIOimport
dc.titleOn the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3
dc.source.endpage5
dc.source.journalIEEE Microwave and Guided Wave Letters
dc.source.issue1
dc.source.volume7
imec.availabilityPublished - open access


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