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Structural characterization of improved GaN epilayers grown on a Ge(111) substrate

dc.contributor.authorZhang, Yucheng
dc.contributor.authorFu, Wai-Yuan
dc.contributor.authorHumphreys, Colin
dc.contributor.authorLieten, Ruben
dc.date.accessioned2021-10-19T22:24:50Z
dc.date.available2021-10-19T22:24:50Z
dc.date.issued2011-08
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20218
dc.sourceIIOimport
dc.titleStructural characterization of improved GaN epilayers grown on a Ge(111) substrate
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.source.peerreviewyes
dc.source.beginpage91001
dc.source.journalApplied Physics Express
dc.source.issue9
dc.source.volume4
dc.identifier.urlhttp://dx.doi.org/10.1143/APEX.4.091001
imec.availabilityPublished - imec


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