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Oxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density

dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorMerckling, Clement
dc.contributor.authorLin, Dennis
dc.contributor.authorWang, Wei-E
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-20T10:01:24Z
dc.date.available2021-10-20T10:01:24Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20278
dc.sourceIIOimport
dc.titleOxide trapping in InGaAs-Al2O3 system and the role of sulfur in reducing the Al2O3 trap density
dc.typeJournal article
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage1544
dc.source.endpage1546
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume33
imec.availabilityPublished - imec


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