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Junction field effect on the retention time for one-transistor floating-body RAM

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorNicoletti, Talitha
dc.contributor.authorMendes Almeida, Luciano
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorBlomme, Pieter
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-20T10:01:57Z
dc.date.available2021-10-20T10:01:57Z
dc.date.issued2012
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20293
dc.sourceIIOimport
dc.titleJunction field effect on the retention time for one-transistor floating-body RAM
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2167
dc.source.endpage2172
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue8
dc.source.volume59
imec.availabilityPublished - open access


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