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Hybrid floating gate cell for sub-20-nm NAND flash memory technology

dc.contributor.authorBlomme, Pieter
dc.contributor.authorCacciato, Antonio
dc.contributor.authorWellekens, Dirk
dc.contributor.authorBreuil, Laurent
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorVrancken, Christa
dc.contributor.authorRichard, Olivier
dc.contributor.authorDebusschere, Ingrid
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-20T10:06:44Z
dc.date.available2021-10-20T10:06:44Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20369
dc.sourceIIOimport
dc.titleHybrid floating gate cell for sub-20-nm NAND flash memory technology
dc.typeJournal article
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorDebusschere, Ingrid
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage333
dc.source.endpage335
dc.source.journalIEEE Electron Device Letters
dc.source.issue3
dc.source.volume33
imec.availabilityPublished - open access


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