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dc.contributor.authorChen, Yangyin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorGoux, Ludovic
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorKittl, Jorge
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-20T10:15:30Z
dc.date.available2021-10-20T10:15:30Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20446
dc.sourceIIOimport
dc.titleInsights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
dc.typeJournal article
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage113513
dc.source.journalApplied Physics Letters
dc.source.issue11
dc.source.volume100
imec.availabilityPublished - open access


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