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A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

dc.contributor.authorChen, Yangyin
dc.contributor.authorYu, Shimeng
dc.contributor.authorGuan, Ximeng
dc.contributor.authorWong, H.S.Philip
dc.contributor.authorKittl, Jorge
dc.date.accessioned2021-10-20T10:15:47Z
dc.date.available2021-10-20T10:15:47Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20448
dc.sourceIIOimport
dc.titleA Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
dc.typeJournal article
dc.contributor.imecauthorChen, Yangyin
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage43507
dc.source.journalApplied Physics Letters
dc.source.issue4
dc.source.volume100
imec.availabilityPublished - open access


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