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AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility

dc.contributor.authorCheng, Kai
dc.contributor.authorLiang, Hu
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGeens, Karen
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorKang, Xuanwu
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorDekoster, Johan
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorJun, Sung Won
dc.contributor.authorChung, Hua
dc.date.accessioned2021-10-20T10:16:06Z
dc.date.available2021-10-20T10:16:06Z
dc.date.issued2012
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20450
dc.sourceIIOimport
dc.titleAlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
dc.typeJournal article
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage011002-1
dc.source.journalApplied Physics Express
dc.source.issue1
dc.source.volume5
imec.availabilityPublished - open access


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