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Metal oxide semiconductor devices studies of molecula- beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)

dc.contributor.authorChu, Eric
dc.contributor.authorMerckling, Clement
dc.contributor.authorDekoster, Johan
dc.contributor.authorKwo, R.
dc.contributor.authorHong, M.
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-20T10:18:00Z
dc.date.available2021-10-20T10:18:00Z
dc.date.issued2012
dc.identifier.issn1882-0778
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20463
dc.sourceIIOimport
dc.titleMetal oxide semiconductor devices studies of molecula- beam-deposited Al2O3/InP heterostructures with various surface orientations (001), (110), and (111)
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage61202
dc.source.journalApplied Physics Express
dc.source.issue6
dc.source.volume5
imec.availabilityPublished - open access


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