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Defect loss: a new concept for reliability of MOSFETs

dc.contributor.authorDuan, M.
dc.contributor.authorZhang, J. F.
dc.contributor.authorJi, Z.
dc.contributor.authorZhang, W.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T10:48:58Z
dc.date.available2021-10-20T10:48:58Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20629
dc.sourceIIOimport
dc.titleDefect loss: a new concept for reliability of MOSFETs
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage480
dc.source.endpage482
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume33
dc.identifier.urlhttp://dx.doi.org/10.1109/LED.2012.2185033
imec.availabilityPublished - open access


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