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On the efficiency of stress techniques in gate-last n-type bulk FinFETs

dc.contributor.authorEneman, Geert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVeloso, Anabela
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.date.accessioned2021-10-20T10:54:09Z
dc.date.available2021-10-20T10:54:09Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20652
dc.sourceIIOimport
dc.titleOn the efficiency of stress techniques in gate-last n-type bulk FinFETs
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage19
dc.source.endpage24
dc.source.journalSolid-State Electronics
dc.source.volume74
imec.availabilityPublished - imec
imec.internalnotesSelected papers ESSDERC 2011


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