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The implant-free quantum well field-effect-transistor: harnessing the power of heterostructures

dc.contributor.authorHellings, Geert
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorBenbakhti, Brahim
dc.contributor.authorAlian, AliReza
dc.contributor.authorWaldron, Niamh
dc.contributor.authorBender, Hugo
dc.contributor.authorEneman, Geert
dc.contributor.authorKrom, Raymond
dc.contributor.authorSchulze, Andreas
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLoo, Roger
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-20T11:32:44Z
dc.date.available2021-10-20T11:32:44Z
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20796
dc.sourceIIOimport
dc.titleThe implant-free quantum well field-effect-transistor: harnessing the power of heterostructures
dc.typeJournal article
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage3326
dc.source.endpage3331
dc.source.journalThin Solid Films
dc.source.issue8
dc.source.volume520
dc.identifier.urlhttp://dx.doi.org/10.1016/j.tsf.2011.10.105
imec.availabilityPublished - imec


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