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Growth of high Ge content SiGe on (110) oriented Si wafers

dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVanherle, Wendy
dc.contributor.authorVincent, Benjamin
dc.contributor.authorDekoster, Johan
dc.contributor.authorBender, Hugo
dc.contributor.authorMoussa, Alain
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-20T11:37:34Z
dc.date.available2021-10-20T11:37:34Z
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20813
dc.sourceIIOimport
dc.titleGrowth of high Ge content SiGe on (110) oriented Si wafers
dc.typeJournal article
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3179
dc.source.endpage3184
dc.source.journalThin Solid Films
dc.source.issue8
dc.source.volume520
imec.availabilityPublished - open access
imec.internalnotesICSI-7 paper


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