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Interface states beyond band gap and their impact on charge carrier mobility in MOSFETs

dc.contributor.authorJi, Z.
dc.contributor.authorZhang, J. F.
dc.contributor.authorZhang, W. D.
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T11:53:44Z
dc.date.available2021-10-20T11:53:44Z
dc.date.issued2012
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20867
dc.sourceIIOimport
dc.titleInterface states beyond band gap and their impact on charge carrier mobility in MOSFETs
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage783
dc.source.endpage790
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue3
dc.source.volume59
dc.identifier.urlhttp://dx.doi.org/10.1109/TED.2011.2177839
imec.availabilityPublished - imec


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