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Origin of multiple memory states in organic ferroelectric field-effect transistors

dc.contributor.authorKam, Benjamin
dc.contributor.authorLi, Xiaoran
dc.contributor.authorCristoferi, Claudio
dc.contributor.authorSmits, Edsger C.P.
dc.contributor.authorMityashin, Alexander
dc.contributor.authorSchols, Sarah
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorHeremans, Paul
dc.date.accessioned2021-10-20T12:02:59Z
dc.date.available2021-10-20T12:02:59Z
dc.date.issued2012
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20896
dc.sourceIIOimport
dc.titleOrigin of multiple memory states in organic ferroelectric field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorKam, Benjamin
dc.contributor.imecauthorSchols, Sarah
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage33304
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume101
imec.availabilityPublished - open access


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