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Modeling the impact of junction angles in tunnel field-effect transistors

dc.contributor.authorKao, Frank
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandenberghe, William
dc.contributor.authorSoree, Bart
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-20T12:05:11Z
dc.date.available2021-10-20T12:05:11Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20902
dc.sourceIIOimport
dc.titleModeling the impact of junction angles in tunnel field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorKao, Frank
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewyes
dc.source.beginpage31
dc.source.endpage37
dc.source.journalSolid-State Electronics
dc.source.issue1
dc.source.volume69
imec.availabilityPublished - imec


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