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Hyperthermal oxidation of Si(100)2x1 surfaces: effect of growth temperature

dc.contributor.authorKhalilov, Umedjon
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorvan Duin, Adry
dc.contributor.authorNeyts, Erik
dc.date.accessioned2021-10-20T12:13:46Z
dc.date.available2021-10-20T12:13:46Z
dc.date.issued2012
dc.identifier.issn1932-7447
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20929
dc.sourceIIOimport
dc.titleHyperthermal oxidation of Si(100)2x1 surfaces: effect of growth temperature
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage8649
dc.source.endpage8656
dc.source.journalJournal of Physical Chemistry C
dc.source.issue15
dc.source.volume116
imec.availabilityPublished - imec


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