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Process dependent N/PBTI characteristics of TiN gate FinFETs

dc.contributor.authorKim, Jin Ju
dc.contributor.authorCho, Moon Ju
dc.contributor.authorPantisano, Luigi
dc.contributor.authorChiarella, Thomas
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorLee, Byoung Hun
dc.date.accessioned2021-10-20T12:16:05Z
dc.date.available2021-10-20T12:16:05Z
dc.date.issued2012
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20936
dc.sourceIIOimport
dc.titleProcess dependent N/PBTI characteristics of TiN gate FinFETs
dc.typeJournal article
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage937
dc.source.endpage939
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume33
imec.availabilityPublished - imec


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