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dc.contributor.authorLoo, Roger
dc.contributor.authorWang, Gang
dc.contributor.authorOrzali, Tommaso
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorLeys, Maarten
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorEyben, Pierre
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-20T12:58:37Z
dc.date.available2021-10-20T12:58:37Z
dc.date.issued2012
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21060
dc.sourceIIOimport
dc.titleSelective area growth of InP on on-axis Si(001) substrates with low antiphase boundary formation
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.identifier.doi10.1149/2.051203jes
dc.source.peerreviewyes
dc.source.beginpageH260
dc.source.endpageH265
dc.source.journalJournal of the Electrochemical Society
dc.source.issue3
dc.source.volume159
imec.availabilityPublished - imec


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