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Impact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs

dc.contributor.authorMahatme, N.
dc.contributor.authorZhang, E.
dc.contributor.authorReed, R.A.
dc.contributor.authorBhuva, B.L.
dc.contributor.authorSchrimpf, R.D.
dc.contributor.authorFleetwood, D.M.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-20T13:03:53Z
dc.date.available2021-10-20T13:03:53Z
dc.date.issued2012
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21074
dc.sourceIIOimport
dc.titleImpact of back-gate bias and fevice geometry on the total ionizing dose response of 1-transistor floating body RAMs
dc.typeJournal article
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2966
dc.source.endpage2973
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue6
dc.source.volume59
imec.availabilityPublished - open access
imec.internalnotesNSREC paper


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