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Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

dc.contributor.authorMengehini, Matteo
dc.contributor.authorStocco, Antonio
dc.contributor.authorBertin, Marcon
dc.contributor.authorMarcon, Denis
dc.contributor.authorChini, Alessandro
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-20T13:28:25Z
dc.date.available2021-10-20T13:28:25Z
dc.date.issued2012-01
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21138
dc.sourceIIOimport
dc.titleTime-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.source.peerreviewyes
dc.source.beginpage33505
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume100
imec.availabilityPublished - imec


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